2021

High-Quality Few-Layer Graphene on Single-Crystalline SiC thin film Grown on Affordable Wafer for Device Applications
Nanomaterials, 11 (2021), pp. 392-1-392-13. DOI: 10.3390/nano11020392
Norifumi Endoh, Shoji Akiyama, Keiichiro Tashima, Kento Suwa, Takamasa Kamogawa, Roki Kohama, Kazutoshi Funakubo, Shigeru Konishi, Hiroshi Mogi, Minoru Kawahara, Makoto Kawai, Yoshihiro Kubota, Takuo Ohkochi, Masato Kotsugi, Koji Horiba, Hiroshi Kumigashira, Maki Suemitsu, Issei Watanabe and H. Fukidome**
インパクトファクター:5.346
被引用回数:0
*Editor’s choice*
*信越化学,情報通信研究機構などとの産官学連携共同研究*
デバイス用基板上SiC単結晶薄膜を用いた超高品質グラフェンと高周波デバイスの廉価な製造法の創出
表面と真空, 64 (2021), pp.306-311.
吹留 博一**
被引用回数:0
Atomic arrangements of quasicrystal bilayer graphene: Interlayer distance expansion
Phys. Rev. B 104(2021), L180202.
Yuki Fukaya, Yuhao Zhao, Hyun-Woo Kim, Joung Real Ahn, Hirokazu Fukidome, and Iwao Matsuda