Epitaxial Graphene Formation on 3C-SiC/Si Thin Films
Journal of Phys. D, 47. (2014), pp. 094016-1-094016-5.
M. Suemitsu, S. Jiao, H. Fukidome, Y. Tateno, and T. Nakabayashi
Microscopically-Tuned Band Structure of Epitaxial Graphene through Interface and Stacking Variations Using Si Substrate Microfabrication
Scientific Reports, 4. (2014), pp. 5173-1-5173-5.
H. Fukidome*, T. Ide, Y. Kawai, T. Shinohara, N. Nagamura, K. Horiba, M. Kotsugi, T. Ohkochi,
T. Kinoshita, H. Kumigashira, M. Oshima, and M. Suemitsu
Orbital-Specific Tunability of Man-Body Effects in Bilayer Graphene by Gate Bias and Metal Contact
Scientific Reports, 4. (2014), pp. 3713-1-3713-5.
H. Fukidome*, M. Kotsugi, K. Nagashio, R. Sato, T. Ohkouchi, T. Itoh, A. Toriumi, M. Suemitsu, and T. Kinoshita
Observing Hot Carrier Distribution in an N-Type Epitaxial Graphene on a SiC Substrate
Applied Physics Letters, 104. (2014), pp. 161103-1-161103-4.
T. Someya, H. Fukidome*, Y. Ishida, R. Yoshida, T. Iimori, R. Yukawa, K. Akikuno, Sh. Yamamoto, S. Yamamoto, T. Yamamoto, T. Kanai, K. Funakubo, M. Suemitsu, J. Itatani, F. Komori, S. Shin, and I. Matsuda
Pinpoint Operando Analysis of the Electronic States of a Graphene Transistor Using
Photoemission Nanospectroscopy
Applied Physics Express, 7. (2014), pp. 065101-1-065101-4.
H. Fukidome*, K. Nagashio, N. Nagamura, K. Tashima, K. Funakubo, K. Horiba, M. Suemitsu, and M. Oshima
High Quality Graphene Formation on 3C-SiC/4H-AlN/Si Heterostructure
Materials Science Forum, 806. (2014), pp. 89-93.
S. Jiao, Y. Murakami, H. Nagasawa, H. Fukidome, I. Makabe, Y. Tateno, T. Nakabayashi, and M. Suemitsu