Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations
Japanese Journal of Applied Physics,50(4),(2011)
H. Handa, R. Takahashi, S. Abe, K. Imaizumi, E. Saito, M.H. Jung, S. Ito, H. Fukidome and M. Suemitsu
Temperature-Programmed Desorption Observation of　Graphene-on-ilicon Process
Japanese Journal of Applied Physics,50(7),(2011),70102-1-70102-5
Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Hirokazu Fukidome , and Maki Suemitsu
Low-Energy-Electron-Diffraction and X-ray-Phototelectron -Spectroscopy Studies of Graphitization of 3C-SiC(111) Thin Film on Si(111) Substrate
Japanese Journal of Applied Physics,50(7),(2011),70103-1-70103-6
Ryota Takahashi, Hiroyuki Handa, Shunsuke Abe, Kei Imaizumi, Hirokazu Fukidome, Akitaka Yoshigoe, Yuden Teraoka, and Maki Suemitsu
Oxygen-Induced Reduction of the Graphitization Temperature of SiC Surface
Japanese Journal of Applied Physics,50(7),(2011),70105-1-70105-6
Kei Imaizumi, Hiroyuki Handa, Ryota Takahashi, Eiji Saito, Hirokazu Fukidome, Yoshiharu Enta, Yuden Teraoka, Akitaka Yoshigoe, and Maki Suemitsu
Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications
Japanese Journal of Applied Physics,50(7),(2011),70107-1-70107-5
Myung-Ho Jung, Hiroyuki Handa, Ryota Takahashi, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, and Maki Suemitsu
Investigation of Graphene Field Effect Transistors with Al2O3 Gate Dielectrics Formed by Metal Oxidation
Japanese Journal of Applied Physics,50(7),(2011),70111-1-70111-5
Myung-Ho Jung, Hiroyuki Handa, Ryota Takahashi, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, and Maki Suemitsu
Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device
Japanese Journal of Applied Physics,50(7),(2011),70113-1-70113-4
Amine El Moutaouakil, Hyun-Chul Kang, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Eiichi Sano, Maki Suemitsu, and Taiichi Otsuji
Complimentary logic inverter on epitaxial graphene/6H-SiC field effect transistor with diamond-like carbon film as gate dielectrics at room temperature
nature Graphene Conference,(2011)
Amine El Moutaouakil, Susumu Takabayashi, Shuichi Ogawa, Yuji Takakuwa, Hyun-Chul Kang, Ryota Takahashi, Hirokazu Fukidome, Maki Suemitsu, Eiichi Sano, Tetsuya Suemitsu, Taiichi Otsuji
Growth of epitaxial graphene on 3C-SiC/Si heterostructure
HeteroSiC-WASMPE2011,(2011)
Maki Sue, Hirokazu Fukidome
Tuning of Structural and Electronic properties of Epitaxial Graphene by Substrate Microfabrication
2011 International Conference on Solid State Devices and Materials (SSDM2011),(2011)
H.Fukidome, H.Handa, M.Kotsugi, Th.Seyller, Y.Kawai, T.Ohkouchi, K.Horn, R.Takahashi, K.Imaizumi, Y.Enta, M.Suemitsu, T.Kinoshita
Graphene/SiC/Si FETs with SiCN Gate Stack
the 220th ECS Meeting & Electrochemical Energy Summit,(2011)
T. Suemitsu, M. Kubo, H. Handa, R. Takahashi, H. Fukidome, M. Suemitsu, and T. Otsuji
Tuning of Electronic Properties of Epitaxial Graphene on Microfabrication
第24回マイクロプロセス・ナノテクノロジー国際会議(MNC 2011),(2011)
H. Fukidome, H. Handa, M. Kotsugi, T.Seyller, Y. Kawai, T. Ohkouchi, K. Horn, R.Takahashi, K. Imaizumi, Y. Enta, M. Suemitsu and T. Kinoshita
Effect of SiH4 Pre-annealing on Graphitization of 3C-SiC/Si
第24回マイクロプロセス・ナノテクノロジー国際会議(MNC 2011),(2011)
H. Fukidome, S. Abe, H. Handa, R.Takahashi, K. Imaizumi, S. Sanbonsuge and M. Suemitsu
Impacts of the Access Resistance on the Channel Conduction Characteristics in Graphene FETs
第24回マイクロプロセス・ナノテクノロジー国際会議(MNC 2011),(2011)
M.-H. Jung, C. Quan, H. Fukidome, T.Suemitsu, T. Otsuji and M. Suemitsu