Formation of qualified epitaxial graphene on Si substrates using two-step heteroexpitaxy of C-terminated 3C-SiC(-1-1-1) on Si(110)
Diamond & Related Materials
Shota Sambonsuge, Sai Jiao, Hiroyuki Nagasawa, Hirokazu Fukidome, Sergey N. Filimonov, Maki Suemitsu
Evaluations of crystal defects of 3C-SiC(-1-1-1) film on Si(110) substrate
Phys. Status Solidi A
Shota Sambonsuge, Shun Ito, Sai Jiao, Hiroyuki Nagasawa, Hirokazu Fukidome, Sergey N. Filimonov, and Maki Suemitsu
In Situ SR-XPS Observation of Ni-assisted Low-Temperature Formation of Epitaxial Graphene on 3C-SiC/Si
Nanoscale Research Letters(Nano express)
Mika Hasegawa, Kenta Sugawara, Ryota Suto, Shota Sambonsuge, Yuden Teraoka, Akitaka Yoshigoe, Sergey Filimonov, Hirokazu Fukidome, Maki Suemitsu
High quality graphene formation on 3C-SiC/4H-AlN/Si heterostructure
Materials Science Forum
Sai Jiao, Yuya Murakami, Hiroyoki Nagasawa, Hirokazu Fukidome, Isao Makabe, Yasunori Tateno, Takashi Nakabayashi, and Maki Suemitsu
微量O₂添加アニール法によるSi(111)及びSi(100)基板上エピタキシャルグラフェン
SPring-8/SACLA利用研究成果集
Tai Yokoyama, Kei Imaizumi, Hirokazu Fukidome, Akitaka Yoshigoe, Yuden Teraoka and Maki Suemitsu