Formation of Qualified Epitaxial Graphene on Si Substrates Using Two-Step Heteroepitaxy of C-Terminated 3C-SiC(-1-1-1) on Si(110)
Diamond and Related Materials, 67. (2016), pp. 51-53.
S. Sambonsuge†, S. Jiao, H. Nagasawa, H. Fukidome, S. N. Filimonov, M. Suemitsu
Diamond and Related Materials, 67. (2016), pp. 51-53.
S. Sambonsuge†, S. Jiao, H. Nagasawa, H. Fukidome, S. N. Filimonov, M. Suemitsu
Photonic Frequency Double-Mixing Conversion over the 120 GHz Band using InP- and Graphene-Based Transistors
Journal of Lightwave Technology, 34. (2016), pp. 2011-2019.
K. Sugawara, G. Tamamushi, M.B. Hussin, A. Dobroiu, T. Yoshida, T. Suemitsu, H. Fukidome, M. Suemitsu, V. Ryzhii, K. Iwatsuki, S. Kuwano, J.-I. Kani, J. Terada, and T. Otsuji
Journal of Lightwave Technology, 34. (2016), pp. 2011-2019.
K. Sugawara, G. Tamamushi, M.B. Hussin, A. Dobroiu, T. Yoshida, T. Suemitsu, H. Fukidome, M. Suemitsu, V. Ryzhii, K. Iwatsuki, S. Kuwano, J.-I. Kani, J. Terada, and T. Otsuji
Observation of Insulating and Metallic-Type Behavior in Bi2Se3 Transistor at Room Temperature
Nanosystems: Physics, Chemistry, Matematics, 7. (2016), pp. 565-568.
G. Venugopal, M. Suemitsu and H. Fukidome*
Nanosystems: Physics, Chemistry, Matematics, 7. (2016), pp. 565-568.
G. Venugopal, M. Suemitsu and H. Fukidome*
Graphene on C-terminated face of 4H-SiC Observed by Noncontact Scanning Nonlinear Dielectric Potentiometry
Japanese Journal of Applied Physics, 55. (2016), pp. 08NB02-1-08NB02-5.
K. Yamasue, H. Fukidome, K. Tashima, M. Suemitsu, and Y. Cho
Japanese Journal of Applied Physics, 55. (2016), pp. 08NB02-1-08NB02-5.
K. Yamasue, H. Fukidome, K. Tashima, M. Suemitsu, and Y. Cho
Observation of Nanoscopic Charge-Transfer Region at Metal/MoS2 Interface
Materials Research Express, 3 (2016), pp. 075004-1-075004-5.
R. Suto, G. Venugopal. K. Tashima, N. Nagamura, K. Horiba, M. Suemitsu, M. Oshima, and H. Fukidome*
Materials Research Express, 3 (2016), pp. 075004-1-075004-5.
R. Suto, G. Venugopal. K. Tashima, N. Nagamura, K. Horiba, M. Suemitsu, M. Oshima, and H. Fukidome*
Evaluations of Crystal Defects of 3C-SiC(-1-1-1) Film on Si(110) Substrate
Physical Status Solidi (a), 213. (2016), pp. 1125-1129.
S. Sambonsuge†, S. Ito, S. Jiao, H. Nagasawa, H. Fukidome and M. Suemitsu
Physical Status Solidi (a), 213. (2016), pp. 1125-1129.
S. Sambonsuge†, S. Ito, S. Jiao, H. Nagasawa, H. Fukidome and M. Suemitsu
High-Performance Self-Aligned Graphene Transistors Fabricated Using Contamination- and Defect-Free Process
Japanese Journal of Applied Physics, 55. (2016), pp. 06GF11-1-06GF11-4.
G.-H. Park†, K.-S. Kim, H. Fukidome, T. Suemitsu, T. Otsuji, W.-J. Cho, and M. Suemitsu
Japanese Journal of Applied Physics, 55. (2016), pp. 06GF11-1-06GF11-4.
G.-H. Park†, K.-S. Kim, H. Fukidome, T. Suemitsu, T. Otsuji, W.-J. Cho, and M. Suemitsu
Solution-Processed Al2O3 Gate Dielectrics for Graphene Field-Effect Transistors
Japanese Journal of Applied Physics, 55. (2016), pp. 091502-1-091502-4.
G.-H. Park, K.-S. Kim, H. Fukidome, T. Suemitsu, T. Otsuji, W.-J. Cho, and M. Suemitsu
Japanese Journal of Applied Physics, 55. (2016), pp. 091502-1-091502-4.
G.-H. Park, K.-S. Kim, H. Fukidome, T. Suemitsu, T. Otsuji, W.-J. Cho, and M. Suemitsu
Inhomogeneous Longitudinal Distribution of Ni Atoms on Graphene Induced by Layer-Dependent- Internal Diffusion
Applied Physics Letters, 109. (2016), pp. 111604-1-111604-5.
M. Hasegawa†, K. Tashima, M. Kotsugi, T. Ohkochi, M. Suemitsu, and H. Fukidome*
Applied Physics Letters, 109. (2016), pp. 111604-1-111604-5.
M. Hasegawa†, K. Tashima, M. Kotsugi, T. Ohkochi, M. Suemitsu, and H. Fukidome*
Extremely Uniform Epitaxial Growth of Graphene from Sputtered SiC Films on SiC Substrates
MRS Advances, 2. (2016), pp. 51-56.
F. Mitsuhashi, M. Okada, Y. Tateno, T. Nakabayashi, M. Ueno, H. Nagasawa,
H. Fukidome, and Maki Suemitsu
MRS Advances, 2. (2016), pp. 51-56.
F. Mitsuhashi, M. Okada, Y. Tateno, T. Nakabayashi, M. Ueno, H. Nagasawa,
H. Fukidome, and Maki Suemitsu