Control of Electronic and Structural Properties of Epitaxial Graphene on 3C-SiC/Si and Its Device Applications
2012 MRS Spring Meeting
Hirokazu Fukidome, Masato Kotsugi, Takuo Ohkouchi, Akitaka Yoshigoe, Yuden Teraoka, Yoshiharu Enta, Toyohiko Kinoshita, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu
基板相互作用によるグラフェンの電子状態制御
IEICE ED
吹留博一、川合祐輔、末光真希
High performance graphene field-effect transistors with extremely small access length using selfaligned source and drain technique
2012APEMC(2012 Asia-Pacific International Symposium on Electromagnetic Compatibility)
Myung-Ho Jung, Goon-Ho Park, Tomohiro Yoshida, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji , Maki Suemitsu
Graphene-based devices in terahertz science and technology
J. Phys. D
T. Otsuji, S. A. Boubanga Tombet, A. Satou, H. Fukidome, M. Suemitsu, E. Sano, V. Popov, M. Ryzhii, and V. Ryzhii
Epitaxy of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates
Japanese Journal of Applied Physics,51(6)(2012),06FD02-1-06FD02-4 http://jjap.jsap.jp/journal/JJAP-51-6S.html
Takayuki Ide, Yusuke Kawai, Hiroyuki Handa, Hirokazu Fukidome, Masato Kotsugi, Takuo Ohkochi, Yoshiharu Enta, Toyohiko Kinoshita, Akitaka Yoshigoe, Yuden Teraoka, and Maki Suemitsu
Improvement in Film Quality of Epitaxial Graphene on SiC(111)/Si(111) by SiH4 Pretreatment
Japanese Journal of Applied Physics,51(6)(2012),06FD10-1-06FD10-4
Shota Sanbonsuge, Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Hirokazu Fukidome, and Maki Suemitsu
THz Coherent Phonons in Graphene on Silicon
第2回テラヘルツナノ科学国際会議(2nd International Symposium on Terahertz Nanoscience)
M. Suemitsu, M. H. Jung and H. Fukidome (Tohoku Univ.), I. Katayama, J. Takeda(Yokohama National Univ.), M. Kitajima (National Defense Academy)
Precise control of epitaxy of graphene by microfabricating SiC substrate
Applied Physics Letters,101,(7),041605-1-041605-5
H. Fukidome, Y. Kawai, F. Fromm, M. Kotsugi, H. Handa, T. Ide, T. Ohkouchi, H. Miyashita, Y. Enta, T. Kinoshita, Th. Seyller, and M. Suemitsu
High-rate rotated epitaxy of 3C-SiC(111) on Si(110) substrate for qualified epitaxial graphene on silicon n
ECSCRM2012 (9 European Conference on Silicon Carbide & Related Materials)
Maki Suemitsu, Shota Sanbonsuge, Eiji Saito, Myung-Ho Jung, Hirokazu Fukidome, Sergey Filimonov
Rotated epitaxy of 3C-SiC(111) on Si(110) using monomethylsilane-based gas-source molecular-beam epitaxy
ECSCRM2012 (9 European Conference on Silicon Carbide & Related Materials)
Shota Sanbonsuge, Eiji Saito, Myung-Ho Jung,Hirokazu Fukidome, Sergey Filimonov, and Maki Suemitsu
Definite Observation of Interfacial Charge Transfer in Graphene Transistor 　by Using Soft X-ray 3D Scanning Photoelectron Microscopy
SSDM (2012 International Conference on Solid State Devices and Materials)
Hirokazu Fukidome, Naoka Nagamura, Koji Horiba, Satoshi Toyoda, Shodai Kurosumi, Toshihiro Shinohara, Takayuki Ide, Masaharu Oshima, Maki Suemitsu, Kosuke Nagashio, Akira Toriumi, and Masaharu Oshima
Modulation of Electronic and Vibrational Properties of Epitaxial Graphene by Spatially Confining Eptaxy
VAS14(14th International Conference on Vibrations at Surfaces)
H. Fukidome, Y. Kawai, F. Fromm, M. Kosugi, T. Ide, T. Ohkouchi, H. Miyashita, Y. Enta, T. Kinoshita, T. Seyller, M. Suemitsu
Epitaxial graphene on silicon
ANM2012(4th International Conference on Advanced Nano Materials)
Maki Suemitsu, Hirokazu Fukidome
Operando Analysis of Graphene Transistor by Soft X-ray 3D Scanning Photoelectron Microscopy
ISGD-3（3rd Internatinal Symposium on Graphene Devices
Hirokazu Fukidome, Naoka Nagamura, Koji Horiba, Shodai Kurosumi, Toshihiro Shinohara, Takayuki Ide, Maki Suemitsu, Kousuke Nagashio, Akira Toriumi and Masaharu Oshima
Controls of Structural, Electronic, and Pseudofield Properties of Epitaxial Graphene by Microfabrication
Nano-S&T 2011,(2011)
Hirokazu Fukidome, Yusuke Kawai, Masato Kotsugi, Felix Fromm, Takayuki Ide, Takuo Ohkouchi, Hidetoshi Miyashita, Toyohiko Kinoshita, Maki Suemitsu1, Thomas Seyller
Oxygen-Plasma Formation of Alumina for a Gate Dielectric in Graphene Field Effect Transistors
ISGD-3（3rd Internatinal Symposium on Graphene Devices
Goon-Ho Park, Myung-Ho Jung, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu
Electronic structure observations of graphene on 3C-SiC(111)/Si(111)
ISGD-3（3rd Internatinal Symposium on Graphene Devices
Syuya Inomata, Ryota Takahashi, Hiroyuki Handa, Kei Imaizumi, Hirokazu Fukidome, Maki Suemitsu
Epitaxy Of Graphene On Si(100) And Si(111) Faces Simultaneously Formed On Si(100) Substrate
ISGD-3（3rd Internatinal Symposium on Graphene Devices
Ryo Sato, Hirokazu fukidome,Maki Suemitsu
Qualified Graphene-On-Silicon Formation Using 3C-SiC(111)/Si(110) Thick Film By Two-Step Growth
ISGD-3（3rd Internatinal Symposium on Graphene Devices
Shota Sambonsuge, Eiji Saito, Sergey Fimimonov, Hirokazu Fukidome, Maki Suemitsu
Spatial Confinement of Epitaxy of Graphene on Microfabricated SiC to Suppress Thickness Variation
AVS 59th International Symposium & Exhibition
H. Fukidome, T. Ide, H. Handa, Y.Kawai, F. Fromm, M. Kotsugi, T. Ohkouchi, H. Miyashita, Y. Enta, T. Kinoshita, Th. Seyller, M.Suemitsu
In situ Observation of Graphene during Gate Oxide Formationusing Raman Spectroscopy
MNC2012 (25th International Microprocesses and Nanoetechnology Conference)
R. Sato, H. Fukidome and M. Suemitsu
High Frequency Performance of Graphene Field-Effect Transistors with Extremely Small Access Length
3rd International Symposium on Terahertz Nanoscience (TeraNanoⅢ)
Maki Suemitsu
Onset of discharge instability at patterned conductive regions in pulsed-plasmas under near atmospheric pressures
ISPlasma2013(5th International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials)
Yohei Inayoshi, Hirokazu Fukidome, Setsuo Nakajima, Tsuyoshi Uehara, Yasutake Toyoshima and Maki Suemitsu
三次元nanoESCAによるグラフェン・デバイスのその場観察に向けて
ISSP-Workshop
吹留博一
基板相互作用を援用したグラフェンのナノ構造・物性制御
表面科学,33,(10),546-551,(2012)
吹留博一
Graphene materials and devices in terahertz science and technology
MRS Bulletin,33,(10),546-551,(2012)
T. Otsuji, S. A. Boubanga Tombet, A. Satou, H. Fukidome, M. Suemitsu, E. Sano, V. Popov, M. Ryzhii, and V. Ryzhiiu
Epitaxy of Graphene on Si(100) and Si(111) Faces Simultaneously Formed on Si(100) Substrate
SSNS’13
Hirokazu Fukidome