Physical Review B 105(11) 2022年3月15日
被引用回数：0

High-Quality Few-Layer Graphene on Single-Crystalline SiC thin film Grown on Affordable Wafer for Device Applications
Nanomaterials, 11 (2021), pp. 392-1-392-13.　DOI: 10.3390/nano11020392
Norifumi Endoh, Shoji Akiyama, Keiichiro Tashima, Kento Suwa, Takamasa Kamogawa, Roki Kohama, Kazutoshi Funakubo, Shigeru Konishi, Hiroshi Mogi, Minoru Kawahara, Makoto Kawai, Yoshihiro Kubota, Takuo Ohkochi, Masato Kotsugi, Koji Horiba, Hiroshi Kumigashira, Maki Suemitsu, Issei Watanabe and H. Fukidome**
インパクトファクター：5.346
被引用回数：0
＊Editor’s choice＊
＊信越化学，情報通信研究機構などとの産官学連携共同研究＊

デバイス用基板上SiC単結晶薄膜を用いた超高品質グラフェンと高周波デバイスの廉価な製造法の創出
表面と真空, 64 (2021), pp.306-311.
吹留　博一**
被引用回数：0

Atomic arrangements of quasicrystal bilayer graphene: Interlayer distance expansion
Phys. Rev. B 104(2021), L180202.
Yuki Fukaya, Yuhao Zhao, Hyun-Woo Kim, Joung Real Ahn, Hirokazu Fukidome, and Iwao Matsuda

Electrical Transport Properties of Gate Tunable Graphene Lateral Tunnel Diodes
Japanese Journal of Applied Physics, 59 (2020), pp. SIID03-1- SIID03-4.
K. Shiga, T. Komiyama, Y. Fuse, H. Fukidome, A. Satou, T. Otsuji, and T. Uchino
インパクトファクター：1.376
被引用回数：0

A graphene-based magnetoplasmonic metasurface for actively tunable transmission and polarization rotation at terahertz frequencies
Applied Physics Letters, 116 (2020), pp. 221107-1-221107-4.
P. Padmanabhan, S. Boubanga-Tombet, H. Fukidome, T. Otsuji, and R. P. Prasankumar
インパクトファクター：3.791
被引用回数：0

Dynamics of Surface Electron Trapping of a GaN-based Transistors Revealed by Spatiotemporally-Resolved X-ray Spectroscopy
Applied Physics Letters, 117 (2020), pp. 171605-1-171605-6.　DOI: 10.1063/5.0020500
K. Omika, K. Takahashi, A. Yasui, T. Ohkochi, H. Osawa, T. Kouchi, Y. Tateno, M. Suemitsu, H. Fukidome**
インパクトファクター：3.791
被引用回数：1
＊住友電工との産学連携共同研究＊

Element- and Site-specific Many-body Interactions in Few-layer MoS2 during X-ray Absorption Processes
Physica Status Solidi (a), 216 (2019), pp. 1800539-1800539-7.
G. Kamata†, G. Venugopal, M. Kotsugi, T. Ohkochi, M. Suemitsu, and H. Fukidome**
インパクトファクター：1.759
被引用回数：2

Direct formation of solution-based Al2O3 on epitaxial graphene surface for sensor applications
Sensors and Materials, 31 (2019), pp. 2291-2301.
K. S. Kim†, H. Fukidome, and M. Suemitsu**
インパクトファクター：0.759
被引用回数：0

Modulation of Electronic States near Electrodes in Graphene Transistors Observed by Operando Photoelectron Nanospectroscopy
Sensors and Materials, 31 (2019), pp. 2303-2311. (Cover page)
H. Fukidome**, K. Funakubo, N. Nagamura, K. Horiba, Y. Tateno, M. Oshima, and M. Suemitsu
インパクトファクター：0.759
被引用回数：1

Influence of interface dipole layers on the performance of graphene field effect transistors
Carbon, 152 (2019), pp. 680-687.
N. Nagamura, H. Fukidome**, K. Nagashio, K. Horiba, T. Ide, K. Funakubo, K. Tashima, K. Hron, A. Toriumi, M. Suemitsu, and M. Oshima
インパクトファクター：8.821
被引用回数：4

ACS Nano, 13 (2019), pp.11981-11987.
T. Suzuki, T. Iimori, S.-J. Ahn, Y. Zhao, M. Watanabe, J. Xu, M. Fujisawa, T, Kanai, N. Ishii,
J. Itatani, K. Suwa, H. Fukidome, S. Tanaka, J.-R. Ahn, K. Okazaki, S. Shin, F. Komori, and
I. Matsuda**
インパクトファクター：14.588
被引用回数：3

A table-top formation of bilayer quasi-free-standing epitaxialgraphene on SiC(0001) by microwave annealing in air Carbon, 130. (2018), pp. 792-798.
K.-S. Kim, G.-H. Park, H. Fukidome, S. Takashi, I. Takushi, K. Fumio, I. Matsuda, M. Suemitsu

Enhancement of CO2 adsorption on oxygen‐functionalized epitaxial graphene surface at near‐ambient conditions
Physical Chemistry Chemical Physics, 20,（2018）, pp. 19532-19538.
S. Yamamoto, K. Takeuchi, Y. Hamamoto, R.‐Y. Liu, Y. Shiozawa, T. Koitaya, T. Someya, K. Tashima, H. Fukidome, K. Mukai, S. Yoshimoto, M. Suemitsu, Y. Morikawa, J. Yoshinobu and I. Matsuda

Interfacial carrier dynamics of graphene on SiC, traced by the full-range time-resolved core-level photoemission spectroscopy
Applied Physics Letters, 113,（2018）, pp. 051601-1-051601-4.
T. Someya, H. Fukidome, N. Endo, K. Takahashi, S. Yamamoto, and I. Matsuda

Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy
Scientific Reports , 8,（2018）, pp. 13268-1-13268-4.
K. Omika, Y. Tateno, T. Kouchi, T. Komatani, S. Yaegassi, K. Yui, K. Nakata, N. Nagamura, M. Kotsugi, K. Horiba, M. Oshima, M. Suemitsu, and H. Fukidome

Adsorption of CO2 on Graphene: A Combined TPD, XPS, and vdW-DF Study
Journal of Physical Chemistry C, 121. (2017), pp. 2807-2814.
K. Takeuchi, S. Yamamoto, Y. Hamamoto, Y. Shiozawa, K. Tashima, H. Fukidome, T. Koitaya, K. Mukai, S. Yoshimoto, M. Suemitsu, Y. Morikawa, J. Yoshinobu, and I. Matsuda

Suppression of Supercollision Carrier Cooling in High Mobility Graphene on SiC(000-1)
Physical Review B, 95. (2017), pp. 165303-1-165303-7.
T. Someya, H. Fukidome*, H. Watanabe, T. Yamamoto, M. Okada, H. Suzuki, Y. Ogawa, T. Iimori, N. Ishii, T. Kanai, K. Tashima, B. Feng, S. Yamamoto, J. Itatani, F. Komori, K. Okazaki, S. Shin, and I. Matsuda

Solution-Based Formation of High-Quality Gate Dielectrics on Epitaxial Graphene by Microwave-Assisted Annealing
Japanese Journal of Applied Physics, 56. (2017), pp. 06GF09-1-06GF09-5.
K.-S. Kim†, G.-H. Park, H. Fukidome, T. Suemitsu, T. Otsuji, W.-J. Cho, M. Suemitsu

Fabrication of Multi-Layer Bi2Se3 Devices and Observation of Anomalous Electrical Transport Behaviors
Materials Science in Semiconductor Processing, 68. (2017), pp. 128-132.
G. Venugopal, G.-H. Park, M. Suemitsu and H. Fukidome*

Atomic-scale characterization of the interfacial phonon in graphene/SiC
Phys. Rev. B, 96. (2017), pp. 155431-1-155431-7.
E. Minamitani, R. Arafune, T. Frederiksen, T. Suzuki, S. M. F. Shahed, T. Kobayashi, N. Endo,
H. Fukidome, S. Watanabe, and T. Komeda

Formation of Qualified Epitaxial Graphene on Si Substrates Using Two-Step Heteroepitaxy of C-Terminated 3C-SiC(-1-1-1) on Si(110)
Diamond and Related Materials, 67. (2016), pp. 51-53.
S. Sambonsuge†, S. Jiao, H. Nagasawa, H. Fukidome, S. N. Filimonov, M. Suemitsu

Photonic Frequency Double-Mixing Conversion over the 120 GHz Band using InP- and Graphene-Based Transistors
Journal of Lightwave Technology, 34. (2016), pp. 2011-2019.
K. Sugawara, G. Tamamushi, M.B. Hussin, A. Dobroiu, T. Yoshida, T. Suemitsu, H. Fukidome, M. Suemitsu, V. Ryzhii, K. Iwatsuki, S. Kuwano, J.-I. Kani, J. Terada, and T. Otsuji

Observation of Insulating and Metallic-Type Behavior in Bi2Se3 Transistor at Room Temperature
Nanosystems: Physics, Chemistry, Matematics, 7. (2016), pp. 565-568.
G. Venugopal, M. Suemitsu and H. Fukidome*

Graphene on C-terminated face of 4H-SiC Observed by Noncontact Scanning Nonlinear Dielectric Potentiometry
Japanese Journal of Applied Physics, 55. (2016), pp. 08NB02-1-08NB02-5.
K. Yamasue, H. Fukidome, K. Tashima, M. Suemitsu, and Y. Cho

Observation of Nanoscopic Charge-Transfer Region at Metal/MoS2 Interface
Materials Research Express, 3 (2016), pp. 075004-1-075004-5.
R. Suto, G. Venugopal. K. Tashima, N. Nagamura, K. Horiba, M. Suemitsu, M. Oshima, and H. Fukidome*

Evaluations of Crystal Defects of 3C-SiC(-1-1-1) Film on Si(110) Substrate
Physical Status Solidi (a), 213. (2016), pp. 1125-1129.
S. Sambonsuge†, S. Ito, S. Jiao, H. Nagasawa, H. Fukidome and M. Suemitsu

High-Performance Self-Aligned Graphene Transistors Fabricated Using Contamination- and Defect-Free Process
Japanese Journal of Applied Physics, 55. (2016), pp. 06GF11-1-06GF11-4.
G.-H. Park†, K.-S. Kim, H. Fukidome, T. Suemitsu, T. Otsuji, W.-J. Cho, and M. Suemitsu

Solution-Processed Al2O3 Gate Dielectrics for Graphene Field-Effect Transistors
Japanese Journal of Applied Physics, 55. (2016), pp. 091502-1-091502-4.
G.-H. Park, K.-S. Kim, H. Fukidome, T. Suemitsu, T. Otsuji, W.-J. Cho, and M. Suemitsu

Inhomogeneous Longitudinal Distribution of Ni Atoms on Graphene Induced by Layer-Dependent- Internal Diffusion
Applied Physics Letters, 109. (2016), pp. 111604-1-111604-5.
M. Hasegawa†, K. Tashima, M. Kotsugi, T. Ohkochi, M. Suemitsu, and H. Fukidome*

Extremely Uniform Epitaxial Growth of Graphene from Sputtered SiC Films on SiC Substrates
MRS Advances, 2. (2016), pp. 51-56.
F. Mitsuhashi, M. Okada, Y. Tateno, T. Nakabayashi, M. Ueno, H. Nagasawa,
H. Fukidome, and Maki Suemitsu

Formation of qualified epitaxial graphene on Si substrates using two-step heteroexpitaxy of C-terminated 3C-SiC(-1-1-1) on Si(110)
Diamond & Related Materials
Shota Sambonsuge, Sai Jiao, Hiroyuki Nagasawa, Hirokazu Fukidome, Sergey N. Filimonov, Maki Suemitsu

Evaluations of crystal defects of 3C-SiC(-1-1-1) film on Si(110) substrate
Phys. Status Solidi A
Shota Sambonsuge, Shun Ito, Sai Jiao, Hiroyuki Nagasawa, Hirokazu Fukidome, Sergey N. Filimonov, and Maki Suemitsu

In Situ SR-XPS Observation of Ni-assisted Low-Temperature Formation of Epitaxial Graphene on 3C-SiC/Si
Nanoscale Research Letters(Nano express)
Mika Hasegawa, Kenta Sugawara, Ryota Suto, Shota Sambonsuge, Yuden Teraoka, Akitaka Yoshigoe, Sergey Filimonov, Hirokazu Fukidome, Maki Suemitsu

High quality graphene formation on 3C-SiC/4H-AlN/Si heterostructure
Materials Science Forum
Sai Jiao, Yuya Murakami, Hiroyoki Nagasawa, Hirokazu Fukidome, Isao Makabe, Yasunori Tateno, Takashi Nakabayashi, and Maki Suemitsu

微量O₂添加アニール法によるSi(111)及びSi(100)基板上エピタキシャルグラフェン
SPring-8/SACLA利用研究成果集
Tai Yokoyama, Kei Imaizumi, Hirokazu Fukidome, Akitaka Yoshigoe, Yuden Teraoka and Maki Suemitsu

Epitaxial Graphene Formation on 3C-SiC/Si Thin Films
Journal of Phys. D, 47. (2014), pp. 094016-1-094016-5.
M. Suemitsu, S. Jiao, H. Fukidome, Y. Tateno, and T. Nakabayashi

Microscopically-Tuned Band Structure of Epitaxial Graphene through Interface and Stacking Variations Using Si Substrate Microfabrication
Scientific Reports, 4. (2014), pp. 5173-1-5173-5.
H. Fukidome*, T. Ide, Y. Kawai, T. Shinohara, N. Nagamura, K. Horiba, M. Kotsugi, T. Ohkochi,
T. Kinoshita, H. Kumigashira, M. Oshima, and M. Suemitsu

Orbital-Specific Tunability of Man-Body Effects in Bilayer Graphene by Gate Bias and Metal Contact
Scientific Reports, 4. (2014), pp. 3713-1-3713-5.
H. Fukidome*, M. Kotsugi, K. Nagashio, R. Sato, T. Ohkouchi, T. Itoh, A. Toriumi, M. Suemitsu, and T. Kinoshita

Observing Hot Carrier Distribution in an N-Type Epitaxial Graphene on a SiC Substrate
Applied Physics Letters, 104. (2014), pp. 161103-1-161103-4.
T. Someya, H. Fukidome*, Y. Ishida, R. Yoshida, T. Iimori, R. Yukawa, K. Akikuno, Sh. Yamamoto, S. Yamamoto, T. Yamamoto, T. Kanai, K. Funakubo, M. Suemitsu, J. Itatani, F. Komori, S. Shin, and I. Matsuda

Pinpoint Operando Analysis of the Electronic States of a Graphene Transistor Using
Photoemission Nanospectroscopy
Applied Physics Express, 7. (2014), pp. 065101-1-065101-4.
H. Fukidome*, K. Nagashio, N. Nagamura, K. Tashima, K. Funakubo, K. Horiba, M. Suemitsu, and M. Oshima

High Quality Graphene Formation on 3C-SiC/4H-AlN/Si Heterostructure
Materials Science Forum, 806. (2014), pp. 89-93.
S. Jiao, Y. Murakami, H. Nagasawa, H. Fukidome, I. Makabe, Y. Tateno, T. Nakabayashi, and M. Suemitsu

Microscopic Control of Epitaxial Graphene on SiC(111) and SiC(100) Thin Films on a Microfabricated Si(100) Substrate(Session GR+EM+NS+PS+SS+TF-MoM)
Abstract book of AVS 60th International Symposium & Exhibition
H. Fukidome, T. Ide, M. Suemitsu, Y. Kawai, T. Ohkouchi, M. Kotsugi, T. Kinoshita, T. Shinohara, N. Nagamura, S. Toyoda, K. Horiba, M. Oshima

Site-Selective Epitaxy of Graphene on Si Wafers
Proceedings of the IEEE, 101.
H. Fukidome*, Y. Kawai, H. Handa, H. Hibino, M. Kotsugi, T. Ohkouchi, T. Kinoshita, M. Suemitsu

Solution-processed Al2O3 for gate dielectrics in the Top-Gated Graphene Field EffectTransistors
Abstract book of MNC2013
G.-H. Park, H. Fukidome, T. Suemitsu, T. Otsuji and M. Suemitsu

XRD and Raman-Spectroscopic Evaluation of Graphene on 3C-SiC(111)/Vicinal Si(111) Substrate
Abstract pf ALC’13
Naoki Haramoto, S. Inomata, S. Sambonsuge, H. Fukidome and M. Suemitsu

Coherent nanoscale optical-phonon wave packet in graphene layers
Physical Review B
I. Katayama, K. Sato, S. Koga, J. Takeda, S. Hishita, H. Fukidome, M. Suemitsu, and M. Kitajim

Orbital-specific Tunability of Many-Body Effects in Bilayer Graphene by Gate Bias and Metal Contact
Scientific Report
Hirokazu Fukidome, Masato Kotsugi, Kosuke Nagashio, Ryo Sato, Takuo Ohkochi, Takashi Itoh, Akira Toriumi, Maki Suemitsu & Toyohiko Kinoshita

Epitaxial graphene formation on 3C-SiC/Si thin films
Journal of Physics D
Sai Jiao, Hirokazu Fukidome, Yasunori Tateno, Isao Makabe, Takashi Nakabayashi

Control of Electronic and Structural Properties of Epitaxial Graphene on 3C-SiC/Si and Its Device Applications
2012 MRS Spring Meeting
Hirokazu Fukidome, Masato Kotsugi, Takuo Ohkouchi, Akitaka Yoshigoe, Yuden Teraoka, Yoshiharu Enta, Toyohiko Kinoshita, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu

基板相互作用によるグラフェンの電子状態制御
IEICE ED
吹留博一、川合祐輔、末光真希

High performance graphene field-effect transistors with extremely small access length using selfaligned source and drain technique
2012APEMC(2012 Asia-Pacific International Symposium on Electromagnetic Compatibility)
Myung-Ho Jung, Goon-Ho Park, Tomohiro Yoshida, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji , Maki Suemitsu

Graphene-based devices in terahertz science and technology
J. Phys. D
T. Otsuji, S. A. Boubanga Tombet, A. Satou, H. Fukidome, M. Suemitsu, E. Sano, V. Popov, M. Ryzhii, and V. Ryzhii

Epitaxy of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates
Japanese Journal of Applied Physics,51(6)(2012),06FD02-1-06FD02-4 http://jjap.jsap.jp/journal/JJAP-51-6S.html
Takayuki Ide, Yusuke Kawai, Hiroyuki Handa, Hirokazu Fukidome, Masato Kotsugi, Takuo Ohkochi, Yoshiharu Enta, Toyohiko Kinoshita, Akitaka Yoshigoe, Yuden Teraoka, and Maki Suemitsu

Improvement in Film Quality of Epitaxial Graphene on SiC(111)/Si(111) by SiH4 Pretreatment
Japanese Journal of Applied Physics,51(6)(2012),06FD10-1-06FD10-4
Shota Sanbonsuge, Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Hirokazu Fukidome, and Maki Suemitsu

THz Coherent Phonons in Graphene on Silicon
第2回テラヘルツナノ科学国際会議(2nd International Symposium on Terahertz Nanoscience)
M. Suemitsu, M. H. Jung and H. Fukidome (Tohoku Univ.), I. Katayama, J. Takeda(Yokohama National Univ.), M. Kitajima (National Defense Academy)

Precise control of epitaxy of graphene by microfabricating SiC substrate
Applied Physics Letters,101,(7),041605-1-041605-5
H. Fukidome, Y. Kawai, F. Fromm, M. Kotsugi, H. Handa, T. Ide, T. Ohkouchi, H. Miyashita, Y. Enta, T. Kinoshita, Th. Seyller, and M. Suemitsu

High-rate rotated epitaxy of 3C-SiC(111) on Si(110) substrate for qualified epitaxial graphene on silicon n
ECSCRM2012 (9 European Conference on Silicon Carbide & Related Materials)
Maki Suemitsu, Shota Sanbonsuge, Eiji Saito, Myung-Ho Jung, Hirokazu Fukidome, Sergey Filimonov

Rotated epitaxy of 3C-SiC(111) on Si(110) using monomethylsilane-based gas-source molecular-beam epitaxy
ECSCRM2012 (9 European Conference on Silicon Carbide & Related Materials)
Shota Sanbonsuge, Eiji Saito, Myung-Ho Jung,Hirokazu Fukidome, Sergey Filimonov, and Maki Suemitsu

Definite Observation of Interfacial Charge Transfer in Graphene Transistor 　by Using Soft X-ray 3D Scanning Photoelectron Microscopy
SSDM (2012 International Conference on Solid State Devices and Materials)
Hirokazu Fukidome, Naoka Nagamura, Koji Horiba, Satoshi Toyoda, Shodai Kurosumi, Toshihiro Shinohara, Takayuki Ide, Masaharu Oshima, Maki Suemitsu, Kosuke Nagashio, Akira Toriumi, and Masaharu Oshima

Modulation of Electronic and Vibrational Properties of Epitaxial Graphene by Spatially Confining Eptaxy
VAS14(14th International Conference on Vibrations at Surfaces)
H. Fukidome, Y. Kawai, F. Fromm, M. Kosugi, T. Ide, T. Ohkouchi, H. Miyashita, Y. Enta, T. Kinoshita, T. Seyller, M. Suemitsu

Epitaxial graphene on silicon
ANM2012(4th International Conference on Advanced Nano Materials)
Maki Suemitsu, Hirokazu Fukidome

Operando Analysis of Graphene Transistor by Soft X-ray 3D Scanning Photoelectron Microscopy
ISGD-3（3rd Internatinal Symposium on Graphene Devices
Hirokazu Fukidome, Naoka Nagamura, Koji Horiba, Shodai Kurosumi, Toshihiro Shinohara, Takayuki Ide, Maki Suemitsu, Kousuke Nagashio, Akira Toriumi and Masaharu Oshima

Controls of Structural, Electronic, and Pseudofield Properties of Epitaxial Graphene by Microfabrication
Nano-S&T 2011,(2011)
Hirokazu Fukidome, Yusuke Kawai, Masato Kotsugi, Felix Fromm, Takayuki Ide, Takuo Ohkouchi, Hidetoshi Miyashita, Toyohiko Kinoshita, Maki Suemitsu1, Thomas Seyller

Oxygen-Plasma Formation of Alumina for a Gate Dielectric in Graphene Field Effect Transistors
ISGD-3（3rd Internatinal Symposium on Graphene Devices
Goon-Ho Park, Myung-Ho Jung, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu

Electronic structure observations of graphene on 3C-SiC(111)/Si(111)
ISGD-3（3rd Internatinal Symposium on Graphene Devices
Syuya Inomata, Ryota Takahashi, Hiroyuki Handa, Kei Imaizumi, Hirokazu Fukidome, Maki Suemitsu

Epitaxy Of Graphene On Si(100) And Si(111) Faces Simultaneously Formed On Si(100) Substrate
ISGD-3（3rd Internatinal Symposium on Graphene Devices
Ryo Sato, Hirokazu fukidome,Maki Suemitsu

Qualified Graphene-On-Silicon Formation Using 3C-SiC(111)/Si(110) Thick Film By Two-Step Growth
ISGD-3（3rd Internatinal Symposium on Graphene Devices
Shota Sambonsuge, Eiji Saito, Sergey Fimimonov, Hirokazu Fukidome, Maki Suemitsu

Spatial Confinement of Epitaxy of Graphene on Microfabricated SiC to Suppress Thickness Variation
AVS 59th International Symposium & Exhibition
H. Fukidome, T. Ide, H. Handa, Y.Kawai, F. Fromm, M. Kotsugi, T. Ohkouchi, H. Miyashita, Y. Enta, T. Kinoshita, Th. Seyller, M.Suemitsu

In situ Observation of Graphene during Gate Oxide Formationusing Raman Spectroscopy
MNC2012 (25th International Microprocesses and Nanoetechnology Conference)
R. Sato, H. Fukidome and M. Suemitsu

High Frequency Performance of Graphene Field-Effect Transistors with Extremely Small Access Length
3rd International Symposium on Terahertz Nanoscience (TeraNanoⅢ)
Maki Suemitsu

Onset of discharge instability at patterned conductive regions in pulsed-plasmas under near atmospheric pressures
ISPlasma2013(5th International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials)
Yohei Inayoshi, Hirokazu Fukidome, Setsuo Nakajima, Tsuyoshi Uehara, Yasutake Toyoshima and Maki Suemitsu

三次元nanoESCAによるグラフェン・デバイスのその場観察に向けて
ISSP-Workshop
吹留博一

基板相互作用を援用したグラフェンのナノ構造・物性制御
表面科学,33,(10),546-551,(2012)
吹留博一

Graphene materials and devices in terahertz science and technology
MRS Bulletin,33,(10),546-551,(2012)
T. Otsuji, S. A. Boubanga Tombet, A. Satou, H. Fukidome, M. Suemitsu, E. Sano, V. Popov, M. Ryzhii, and V. Ryzhiiu

Epitaxy of Graphene on Si(100) and Si(111) Faces Simultaneously Formed on Si(100) Substrate
SSNS’13
Hirokazu Fukidome

Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations
Japanese Journal of Applied Physics,50(4),(2011)
H. Handa, R. Takahashi, S. Abe, K. Imaizumi, E. Saito, M.H. Jung, S. Ito, H. Fukidome and M. Suemitsu

Temperature-Programmed Desorption Observation of　Graphene-on-ilicon Process
Japanese Journal of Applied Physics,50(7),(2011),70102-1-70102-5
Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Hirokazu Fukidome , and Maki Suemitsu

Low-Energy-Electron-Diffraction and X-ray-Phototelectron -Spectroscopy Studies of Graphitization of 3C-SiC(111) Thin Film on Si(111) Substrate
Japanese Journal of Applied Physics,50(7),(2011),70103-1-70103-6
Ryota Takahashi, Hiroyuki Handa, Shunsuke Abe, Kei Imaizumi, Hirokazu Fukidome, Akitaka Yoshigoe, Yuden Teraoka, and Maki Suemitsu

Oxygen-Induced Reduction of the Graphitization Temperature of SiC Surface
Japanese Journal of Applied Physics,50(7),(2011),70105-1-70105-6
Kei Imaizumi, Hiroyuki Handa, Ryota Takahashi, Eiji Saito, Hirokazu Fukidome, Yoshiharu Enta, Yuden Teraoka, Akitaka Yoshigoe, and Maki Suemitsu

Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications
Japanese Journal of Applied Physics,50(7),(2011),70107-1-70107-5
Myung-Ho Jung, Hiroyuki Handa, Ryota Takahashi, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, and Maki Suemitsu

Investigation of Graphene Field Effect Transistors with Al2O3 Gate Dielectrics Formed by Metal Oxidation
Japanese Journal of Applied Physics,50(7),(2011),70111-1-70111-5
Myung-Ho Jung, Hiroyuki Handa, Ryota Takahashi, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, and Maki Suemitsu

Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device
Japanese Journal of Applied Physics,50(7),(2011),70113-1-70113-4
Amine El Moutaouakil, Hyun-Chul Kang, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Eiichi Sano, Maki Suemitsu, and Taiichi Otsuji

Complimentary logic inverter on epitaxial graphene/6H-SiC field effect transistor with diamond-like carbon film as gate dielectrics at room temperature
nature Graphene Conference,(2011)
Amine El Moutaouakil, Susumu Takabayashi, Shuichi Ogawa, Yuji Takakuwa, Hyun-Chul Kang, Ryota Takahashi, Hirokazu Fukidome, Maki Suemitsu, Eiichi Sano, Tetsuya Suemitsu, Taiichi Otsuji

Growth of epitaxial graphene on 3C-SiC/Si heterostructure
HeteroSiC-WASMPE2011,(2011)
Maki Sue, Hirokazu Fukidome

Tuning of Structural and Electronic properties of Epitaxial Graphene by Substrate Microfabrication
2011 International Conference on Solid State Devices and Materials (SSDM2011),(2011)
H.Fukidome, H.Handa, M.Kotsugi, Th.Seyller, Y.Kawai, T.Ohkouchi, K.Horn, R.Takahashi, K.Imaizumi, Y.Enta, M.Suemitsu, T.Kinoshita

Graphene/SiC/Si FETs with SiCN Gate Stack
the 220th ECS Meeting & Electrochemical Energy Summit,(2011)
T. Suemitsu, M. Kubo, H. Handa, R. Takahashi, H. Fukidome, M. Suemitsu, and T. Otsuji

Tuning of Electronic Properties of Epitaxial Graphene on Microfabrication
第24回マイクロプロセス・ナノテクノロジー国際会議(MNC 2011),(2011)
H. Fukidome, H. Handa, M. Kotsugi, T.Seyller, Y. Kawai, T. Ohkouchi, K. Horn, R.Takahashi, K. Imaizumi, Y. Enta, M. Suemitsu and T. Kinoshita

Effect of SiH4 Pre-annealing on Graphitization of 3C-SiC/Si
第24回マイクロプロセス・ナノテクノロジー国際会議(MNC 2011),(2011)
H. Fukidome, S. Abe, H. Handa, R.Takahashi, K. Imaizumi, S. Sanbonsuge and M. Suemitsu

Impacts of the Access Resistance on the Channel Conduction Characteristics in Graphene FETs
第24回マイクロプロセス・ナノテクノロジー国際会議(MNC 2011),(2011)
M.-H. Jung, C. Quan, H. Fukidome, T.Suemitsu, T. Otsuji and M. Suemitsu

Growth of Graphene on Silicon Substraes and Its Control over Interfacee Properties
2010 Villa Conference on Interaction Among Nanostructures,(2010),29-29
M.Suemitsu and H.Fukidome

Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111)
Nanoscale Research Letters,5(12),(2010),1888-1891
Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Hirokazu Fukidome, Maki Suemitsu

Epitaxial Graphene Field Effect Transistors on SiC substrate with Polymer Gate Dielectric
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials,(2010),589-590
M. H. Jung, H. Handa, R. Takahashi, H. Fukidome and M. Suemits

TEM characterization of epitaxial graphene formed on Si(111), Si(110), Si(100)
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials,(2010),125-126
H. Handa, R. Takahashi, S. Abe, K. Imaizumi, M.H. Jung, S. Ito, H. Fukidome and M. Suemitsu

Epitaxial Graphene-On-Silicon Logic Inverter
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials,(2010),880-881
Amine El Moutaouakil, Hyun-Chul Kang, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Eiichi Sano, Maki Suemitsu and Taiichi Otsuji

Formation of epitaxial graphene on low-index Si substrates
ABSTRACT RJSSS-9,(2010),12-12
M.Suemitsu and H.Fukidome

LEED and XPS observation of formation of epitaxial graphene on Cubic SiC(111)/Si(111)
Proceedings of the 3rd Student Organizing International Mini-Conference on Information Electronics Systems,(2010),161-161
Ryota Takahashi, Hiroyuki Handa, Shunsuke Abe, Kei Imaizumi, Eiji Saito, Hirokazu Fukidome, Maki Suemitsu, Yuden Teraoka, Akitaka Yoshigoe

Discharge instability during the film growth on patterned conductive layers using pulsedplasma CVD under near-atmospheric pressures
Proceedings of the 3rd Student Organizing International Mini-Conference on Information Electronics Systems,(2010),89-90
Yohei Inayoshi, Kunihiro Nakanishi, Hirokazu Fukidome, Maki Suemitsu, Setsuo Nakajima, Tsuyoshi Uehara, Yasutake Toyoshima

Logic inverting operations using Epitaxial Graphene-on-Silicon Field Effect Transistors
Proceedings of the 3rd Student Organizing International Mini-Conference on Information Electronics Systems,(2010)
Amine El Moutaouakil, Hyun-Chul Kang, Hiroyuki Handa, Susumu Takabayashi, Akira Satou, Hirokazu Fukidome, Tetsuya Suemitsu, Eiichi Sano, Maki Suemitsu, Taiichi Otsuji

CONTROL OF STRUCTURAL AND ELECTRONIC PROPERTIES OF EPITAXIAL　GRAPHENE BY CRYSTALLOGRAHIC ORIENTATION OF Si SUBSTRATE
Abstract in 2nd International Symposium on Graphene Devices ,(2010),14-15
Hirokazu Fukidome, Ryota Takahashi, Kei Imaizumi, Hiroyuki Handa, Maki Suemitsu, Akitaka Yoshigoe, Yuden Teraoka, Masato Kotsugi, Takuo Ohkouchi, Toyohiko Kinoshita, Yoshio Watanabe

SURFACE ORIENTATION DEPENDENCE OF THE STRUCTURAL PROPERTIES OF GRAPHENE GROWN ON Si SUBSTRATES
Abstract in 2nd International Symposium on Graphene Devices ,(2010),36-37
Hiroyuki Handa, Ryota Takahashi, Shunsuke Abe, Kei Imaizumi, Eiji Saito, Myung-Ho Jung, Shun Ito, Hirokazu Fukidome and Maki Suemitsu

NANOSCALE CONTROL OF STRUCTURE OF EPITAXIAL GRAPHENE BY USING SUBSTRATE MICROFABRICATION
Abstract in 2nd International Symposium on Graphene Devices ,(2010),68-69
Hirokazu Fukidome, Masato Kotsugi, Yusuke Kawai, Takuo Ohkouchi, Thomas Seyller, Karsten Horn, Hiroyuki Handa, Ryota Takahashi, Kei Imaizumi, Yoshiharu Enta, Maki Suemitsu, Toyohiko Kinoshita, Yoshio Watanabe

INVESTIGATION OF GRAPHENE FIELD EFFECT TRANSISTORS WITH Al2O3 GATE DIELECTRICS FORMED BY METAL OXIDATION
Abstract in 2nd International Symposium on Graphene Devices ,(2010),76-77
Myung-Ho Jung, Hiroyuki Handa, Ryota Takahashi, Hirokazu Fukidome and Maki Suemitsu

LEED OBSERVATION OF THE FORMATION OF EPITAXIAL GRAPHENE ON 3C-SiC(111) ULTRATHIN FILM ON SiC(111)
Abstract in 2nd International Symposium on Graphene Devices ,(2010),56-57
Ryota Takahashi, Yu Miyamoto, Hiroyuki Handa, Eiji Saito, Kei Imaizumi, Hirokazu Fukidome, Maki Suemitsu

OXYGEN-INDUCED REDUCTION OF THE GRAPHITIZATION TEMPERATURE OF SiC SURFACE
Abstract in 2nd International Symposium on Graphene Devices ,(2010),58-59
Kei Imaizumi, Hiroyuki Handa, Ryota Takahashi1 Eiji Saito, Hirokazu Fukidome, Yoshiharu Enta, Yuden Teraoka Akitaka Yoshigoe, and Maki Suemitsu

GRAPHENE FORMATION ON 3C-SiC(111) THIN FILM GROWN ON Si(110) SUBSTRATE
Abstract in 2nd International Symposium on Graphene Devices ,(2010),60-61
Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi， Kei Imaizumi，Hirokazu Fukidome, Maki Suemitsu

TEMPERATURE-PROGRAMMED-DESORPTION STUDY ON GRAPHENE-ONSILICON PROCESS
Abstract in 2nd International Symposium on Graphene Devices ,(2010),62-63
Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi， Kei Imaizumi， Hirokazu Fukidome，Maki Suemitsu

FORMATION OF GRAPHENE BY PULSED-PLASMA CVD UNDER ATMOSPHERIC PRESSURE
Abstract in 2nd International Symposium on Graphene Devices ,(2010),66-67
Kunihiro Nakanishi, Mitsutaka Matsumoto, Yohei Inayoshi, Yuji Uezawa, Setsuo Nakajima, Tsuyoshi Uehara, Yasutake Toyoshima, Hirokazu Fukidome, Maki Suemitsu

CHEMICAL BONDS AT INTERFACES BETWEEN GRAPHENE AND GROUP-10 METALS
Abstract in 2nd International Symposium on Graphene Devices ,(2010),72-73
M. Kubo, S. Takabayashi, R. Takahashi, S. Abe, T. Suemitsu, H. Fukidome, M. Suemitsu, and T. Otsuji

ROOM TEMPERATURE COMPLIMENTARY LOGIC INVERTER ON EPITAXIAL GRAPHENE-ON-SILICON DEVICE
Abstract in 2nd International Symposium on Graphene Devices ,(2010),92-93
A. El Moutaouakil, H-C Kang, H. Handa, H. Fukidome, T. Suemitsu, E. Sano, M. Suemitsu and T. Otsuji

DC AND RF CHARACTERISTICS OF GRAPHENE FETS FORMED BY THERMAL DECOMPOSITION OF SiC GROWN ON SILICON SUBSTRATES
Abstract in 2nd International Symposium on Graphene Devices ,(2010),26-27
H.-C. Kang, S. Takabayashi, K. Akagawa, T. Yoshida, S. Abe, R. Takahashi, H. Fukidome, T. Suemitsu, M. Suemitsu, T. Otsuji

Epitaxial Formation of Graphene on Si Substrates: From Heteroepitaxy of 3C-SiC to Si Sublimation
ECS Transactions,33(6),(2010),859-867
Maki Suemitsu, Hiroyuki Handa, Eiji Saito, and Hirokazu Fukidome

Deposition of Graphene using Near-Atmospheric Pressure Pulsed-Plasma CVD
23rd International Microprocesses and Nanotechnology Conference Digest,(2010),11D-8-26
K. Nakanishi, M. Matsumoto, Y. Inayoshi, Y. Uezawa, S. Nakajima, T. Uehara, Y. Toyoshima, H. Fukidome, M. Suemitsu

Formation of High-k Dielectric Films on Graphene by Metal Oxidation for Top-Gated Graphene Device Application
23rd International Microprocesses and Nanotechnology Conference Digest,(2010),11D-8-131L
M.-H. Jung, H. Handa, R. Takahashi, H. Fukidome and M. Suemitsu

Formation of Epitaxial Graphene on Mesa-patterned SiC Substrate
23rd International Microprocesses and Nanotechnology Conference Digest,(2010),12B-10-2
H. Handa, R. Takahashi, K. Imaizumi, Y. Kawai, H. Fukidome, Y. Enta, M. Suemitsu, M. Kotsugi, T. Ohkochi, Y. Watanabe and T. Kinoshita

Observation of Amplified Stimulated Terahertz Emission from Optically Pumped Heteroepitaxial Graphene-on-Silicon Materials
Journal of Infrared, Millimeter, and Terahertz Waves,(2010)
Hiromi Karasawa, Tsuneyoshi Komori, Takayuki Watanabe, Akira Satou, Hirokazu Fukidome, Maki Suemitsu, Victor Ryzhii, and Taiichi Otsuji

Ambipolar Behavior in Epitaxial Graphene-Based Field-Effect Transistors on Si Substrate
Japanese Journal of Applied Physics,49(6),(2010),06GG01-1-06GG01-5
Roman Olac-vaw, Hyun-Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Maki Suemitsu, and Taiichi Otsuji

Si(111),(110),(100)基板上3C-SiC1薄膜の熱改質によるグラフェン・オン・シリコン形成
表面科学,31(7),(2010),352-358
半田浩之、宮本優、齋藤英司、吹留博一、末光眞希

Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates
Japanese Journal of Applied Physics,49(4),(2010),04DF17-1-04DF17-5
Hyun-Chul Kang, Roman Olac-vaw, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, and Taiichi Otsuji

Epitaxial growth processes of graphene on silicon substrates
Japanese Journal of Applied Physics,49(1),(2010),01AH03-1-01AH03-4
Hirokazu Fukidome, Yu Miyamoto, Hiroyuki Handa, Eiji Saito, and Maki Suemitsu

Epitaxial Graphene on Silicon Substrates
Journal of Physics D,2010,(2010)
M. Suemitsu, H. Fukidome

Epitaxial Graphene Top-Gate FETs on Silicon Substrates
Proc. ISDRS2009, p.TP1-3,2009,(2009)
Hyun-Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, and Hirokazu Fukidome, Tetsuya Suemitsu, Maki Suemitsu, and Taiichi Otsuji

Cleaning-Free Deposition of Highly Crystallized Si Films on Plastic Film Substrates Using Pulsed-Plasma CVD under Near-Atmospheric Pressure
ECS Transactions,25,(2009),345-350
Mitsutaka Matsumoto, Syun Ito, Yohei Inayoshi, Shogo Murashige, Hirokazu Fukidome, Maki Suemitsu, Setsuo Nakajima, Tsuyoshi Uehara, and Yasutake Toyosihima

Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate
e-Journal of Surface Science and Nanotechnology,7,(2009),107-109
Yu Miyamoto, Hiroyuki Handa, Eiji Saito, Atsushi Konno, Yuzuru Narita, Maki Suemitsu, Hirokazu Fukidome, Takashi Ito, Kanji Yasui, Hideki Nakazawa and Tetsuo Endoh